The 1/f noise of silicon nanowire (NW) biological field-effect transistors (NW FETs with exposed channels) is characterized and compared with various fabrication approaches, specifically, a wet orientation-dependent etch (ODE) versus common plasma-based etching methods. The wet-etched devices are shown to have significantly lower noise and subthreshold swing, and the average extracted Hooge parameter for ODE wet-etched devices (αH = 2.1 × 10 -3 is comparable to the values reported for submicrometer MOSFETs with a metal/HfO2 gate stack.
- Low-frequency noise (LFN)
- Nanowire (NW)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering