1/f noise of silicon nanowire BioFETs

Nitin K. Rajan, David A. Routenberg, Jin Chen, Mark A. Reed

Research output: Contribution to journalArticlepeer-review

54 Scopus citations

Abstract

The 1/f noise of silicon nanowire (NW) biological field-effect transistors (NW FETs with exposed channels) is characterized and compared with various fabrication approaches, specifically, a wet orientation-dependent etch (ODE) versus common plasma-based etching methods. The wet-etched devices are shown to have significantly lower noise and subthreshold swing, and the average extracted Hooge parameter for ODE wet-etched devices (αH = 2.1 × 10 -3 is comparable to the values reported for submicrometer MOSFETs with a metal/HfO2 gate stack.

Original languageEnglish (US)
Article number5464364
Pages (from-to)615-617
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number6
DOIs
StatePublished - Jun 2010
Externally publishedYes

Keywords

  • Etching
  • Low-frequency noise (LFN)
  • MOSFET
  • Nanowire (NW)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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