Ab initio models of amorphous InN

B. Cai, D. A. Drabold

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, we present the first structural model of amorphous indium nitride obtained from first-principles simulation. We created a small 64-atom model by quenching from the melt and analyzed a chemically ordered 250-atom model of Mousseau and Barkema. We find that both N and In atoms tend to be fourfold. Upon relaxation, we find no homopolar bonds in the small cell and only one in the 250-atom cell. The topology of the models is analyzed with pair-correlation functions, bond angle distributions, and ring statistics. The vibrational and electronic properties are also obtained. We found that density-functional methods in the local-density approximation predict a very small gap for amorphous InN, similar to the case for crystalline InN.

Original languageEnglish (US)
Article number195204
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number19
DOIs
StatePublished - May 1 2009
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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