Controlling of Schottky barrier heights for Au/n-GaAs and Ti/n-GaAs with hydrogen introduced after metal deposition by bias annealing

S. X. Jin, H. P. Wang, M. H. Yuan, H. Z. Song, H. Wang, W. L. Mao, G. G. Qin, Ze Ying Ren, Bing Chen Li, Xiong Wei Hu, Guo Sheng Sun

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Up to now, in most of the research work done on the effect of hydrogen on a Schottky barrier, the hydrogen was introduced into the semiconductor before metal deposition. This letter reports that hydrogen can be effectively introduced into the Schottky barriers (SBs) of Au/n-GaAs and Ti/n-GaAs by plasma hydrogen treatment (PHT) after metal deposition on 〈100〉 oriented n-GaAs substrates. The Schottky barrier height (SBH) of a SB containing hydrogen shows the zero/reverse bias annealing (ZBA/RBA) effect. ZBA makes the SBH decrease and RBA makes it increase. The variations in the SBHs are reversible. In order to obtain obvious ZBA/RBA effects, selection of the temperature for plasma hydrogen treatment is important, and it is indicated that 100°C for Au/n-GaAs and 150°C for Ti/n-GaAs are suitable temperatures. It is concluded from the analysis of experimental results that only the hydrogen located at or near the metal-semiconductor interface, rather than the hydrogen in the bulk of either the semiconductor or the metal, is responsible for the ZBA/RBA effect on SBH.

Original languageEnglish (US)
Pages (from-to)2719-2721
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number21
DOIs
StatePublished - Dec 1 1993

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Jin, S. X., Wang, H. P., Yuan, M. H., Song, H. Z., Wang, H., Mao, W. L., Qin, G. G., Ren, Z. Y., Li, B. C., Hu, X. W., & Sun, G. S. (1993). Controlling of Schottky barrier heights for Au/n-GaAs and Ti/n-GaAs with hydrogen introduced after metal deposition by bias annealing. Applied Physics Letters, 62(21), 2719-2721. https://doi.org/10.1063/1.109243