Defect-induced dissociation of in silicon

S. K. Estreicher, J. L. Hastings, P. A. Fedders

Research output: Contribution to journalArticle

60 Scopus citations

Abstract

Ab initio molecular-dynamics simulations of intrinsic defects and hydrogen in crystalline silicon reveal an unexpected process with considerable implications. The vacancy (Formula presented) and the self-interstitial (Formula presented) both rapid diffusers in (Formula presented) dissociate interstitial (Formula presented) molecules with a substantial gain in energy: (Formula presented) and (Formula presented) The dissociation of (Formula presented) is caused by the lattice strain associated with the defect, and occurs whenever (Formula presented) molecules are in the vicinity of strained Si-Si bonds. After the dissociation, the two H’s may either bind to the defect that caused the strain or diffuse away from it. The calculated Frenkel pair formation energy is 8.2 eV. The reaction (Formula presented) releases less than 0.1 eV, suggesting that (Formula presented)’s in otherwise perfect Si will not generate intrinsic defects.

Original languageEnglish (US)
Pages (from-to)R12663-R12665
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume57
Issue number20
DOIs
StatePublished - Jan 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Defect-induced dissociation of in silicon'. Together they form a unique fingerprint.

  • Cite this