Devices and circuits in CMOS for THz applications

Z. Ahmad; W. Choi; N. Sharma; J. Zhang; Q. Zhong; D. Y. Kim; Z. Chen; Y. Zhang; R. Han; D. Shim; S. Sankaran; E. Y. Seok; C. Cao; C. Mao; R. M. Schueler; I. R. Medvedev; D. J. Lary; H. J. Nam; Philip Raskin; F. C. Delucia; J. P. McMillan; C. F. Neese; I. Kim; I. Momson; P. Yellswarapu; S. Dong; B. K. Kim

doi:10.1109/IEDM.2016.7838509

Devices and circuits in CMOS for THz applications

Z. Ahmad, W. Choi, N. Sharma, J. Zhang, Q. Zhong, D. Y. Kim, Z. Chen, Y. Zhang, R. Han, D. Shim, S. Sankaran, E. Y. Seok, C. Cao, C. Mao, R. M. Schueler, I. R. Medvedev, D. J. Lary, H. J. Nam, Philip Raskin, F. C. DeluciaJ. P. McMillan, C. F. Neese, I. Kim, I. Momson, P. Yellswarapu, S. Dong, B. K. Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Recent advances of CMOS technology and circuits have made it an alternative for realizing capable and affordable THz systems. With process and circuit optimization, it should be possible to generate useful power and coherently detect signals at frequencies beyond 1THz, and incoherently detect signals at 40THz in CMOS.

Original language	English (US)
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	29.8.1-29.8.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838509
State	Published - Jan 31 2017
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: Dec 3 2016 → Dec 7 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	12/3/16 → 12/7/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2016.7838509

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Ahmad, Z., Choi, W., Sharma, N., Zhang, J., Zhong, Q., Kim, D. Y., Chen, Z., Zhang, Y., Han, R., Shim, D., Sankaran, S., Seok, E. Y., Cao, C., Mao, C., Schueler, R. M., Medvedev, I. R., Lary, D. J., Nam, H. J., Raskin, P., ... Kim, B. K. (2017). Devices and circuits in CMOS for THz applications. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 29.8.1-29.8.4). Article 7838509 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838509

Devices and circuits in CMOS for THz applications. / Ahmad, Z.; Choi, W.; Sharma, N. et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 29.8.1-29.8.4 7838509 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ahmad, Z, Choi, W, Sharma, N, Zhang, J, Zhong, Q, Kim, DY, Chen, Z, Zhang, Y, Han, R, Shim, D, Sankaran, S, Seok, EY, Cao, C, Mao, C, Schueler, RM, Medvedev, IR, Lary, DJ, Nam, HJ, Raskin, P, Delucia, FC, McMillan, JP, Neese, CF, Kim, I, Momson, I, Yellswarapu, P, Dong, S & Kim, BK 2017, Devices and circuits in CMOS for THz applications. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838509, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 29.8.1-29.8.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 12/3/16. https://doi.org/10.1109/IEDM.2016.7838509

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title = "Devices and circuits in CMOS for THz applications",

abstract = "Recent advances of CMOS technology and circuits have made it an alternative for realizing capable and affordable THz systems. With process and circuit optimization, it should be possible to generate useful power and coherently detect signals at frequencies beyond 1THz, and incoherently detect signals at 40THz in CMOS.",

author = "Z. Ahmad and W. Choi and N. Sharma and J. Zhang and Q. Zhong and Kim, {D. Y.} and Z. Chen and Y. Zhang and R. Han and D. Shim and S. Sankaran and Seok, {E. Y.} and C. Cao and C. Mao and Schueler, {R. M.} and Medvedev, {I. R.} and Lary, {D. J.} and Nam, {H. J.} and Philip Raskin and Delucia, {F. C.} and McMillan, {J. P.} and Neese, {C. F.} and I. Kim and I. Momson and P. Yellswarapu and S. Dong and Kim, {B. K.}",

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doi = "10.1109/IEDM.2016.7838509",

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series = "Technical Digest - International Electron Devices Meeting, IEDM",

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AU - Choi, W.

AU - Sharma, N.

AU - Zhang, J.

AU - Zhong, Q.

AU - Kim, D. Y.

AU - Chen, Z.

AU - Zhang, Y.

AU - Han, R.

AU - Shim, D.

AU - Sankaran, S.

AU - Seok, E. Y.

AU - Cao, C.

AU - Mao, C.

AU - Schueler, R. M.

AU - Medvedev, I. R.

AU - Lary, D. J.

AU - Nam, H. J.

AU - Raskin, Philip

AU - Delucia, F. C.

AU - McMillan, J. P.

AU - Neese, C. F.

AU - Kim, I.

AU - Momson, I.

AU - Yellswarapu, P.

AU - Dong, S.

AU - Kim, B. K.

PY - 2017/1/31

Y1 - 2017/1/31

N2 - Recent advances of CMOS technology and circuits have made it an alternative for realizing capable and affordable THz systems. With process and circuit optimization, it should be possible to generate useful power and coherently detect signals at frequencies beyond 1THz, and incoherently detect signals at 40THz in CMOS.

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ER -

Devices and circuits in CMOS for THz applications

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