Devices and circuits in CMOS for THz applications

Z. Ahmad, W. Choi, N. Sharma, J. Zhang, Q. Zhong, D. Y. Kim, Z. Chen, Y. Zhang, R. Han, D. Shim, S. Sankaran, E. Y. Seok, C. Cao, C. Mao, R. M. Schueler, I. R. Medvedev, D. J. Lary, H. J. Nam, Philip Raskin, F. C. DeluciaJ. P. McMillan, C. F. Neese, I. Kim, I. Momson, P. Yellswarapu, S. Dong, B. K. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Recent advances of CMOS technology and circuits have made it an alternative for realizing capable and affordable THz systems. With process and circuit optimization, it should be possible to generate useful power and coherently detect signals at frequencies beyond 1THz, and incoherently detect signals at 40THz in CMOS.

Original languageEnglish (US)
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages29.8.1-29.8.4
ISBN (Electronic)9781509039012
DOIs
Publication statusPublished - Jan 31 2017
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: Dec 3 2016Dec 7 2016

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period12/3/1612/7/16

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Ahmad, Z., Choi, W., Sharma, N., Zhang, J., Zhong, Q., Kim, D. Y., ... Kim, B. K. (2017). Devices and circuits in CMOS for THz applications. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 29.8.1-29.8.4). [7838509] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838509