Abstract
Most conventional semiconductor device simulators, such as PISCES and BAMBI, use a constant diffusivity-to-mobility ratio modeling (linear relation). We modify PISCES to perform field-dependent diffusivity-to-mobility ratio (nonlinear relation) GaAs MESFET simulation and compare it to the constant ratio linear modeling. The results show that current overshoot and stable Gunn-domain formation occurred at a lower channel-impurity concentration for the field-dependent diffusivity-to-mobility ratio case. The transconductance and threshold voltage of a 1-jtm gate-length MESFET are compared also.
Original language | English (US) |
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Pages (from-to) | 2034-2039 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 34 |
Issue number | 10 |
DOIs | |
State | Published - Oct 1987 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering