GaAs MESFET Simulation Using PISCES with Field-Dependent Mobility-Diffusivity Relation

Roderick W. McColl, Ronald L. Carter, John M. Owens, Tsay Jiu Shieh

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Most conventional semiconductor device simulators, such as PISCES and BAMBI, use a constant diffusivity-to-mobility ratio modeling (linear relation). We modify PISCES to perform field-dependent diffusivity-to-mobility ratio (nonlinear relation) GaAs MESFET simulation and compare it to the constant ratio linear modeling. The results show that current overshoot and stable Gunn-domain formation occurred at a lower channel-impurity concentration for the field-dependent diffusivity-to-mobility ratio case. The transconductance and threshold voltage of a 1-jtm gate-length MESFET are compared also.

Original languageEnglish (US)
Pages (from-to)2034-2039
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume34
Issue number10
DOIs
StatePublished - Jan 1 1987

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Transconductance
Semiconductor devices
Threshold voltage
Simulators
Impurities
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

GaAs MESFET Simulation Using PISCES with Field-Dependent Mobility-Diffusivity Relation. / McColl, Roderick W.; Carter, Ronald L.; Owens, John M.; Shieh, Tsay Jiu.

In: IEEE Transactions on Electron Devices, Vol. 34, No. 10, 01.01.1987, p. 2034-2039.

Research output: Contribution to journalArticle

McColl, Roderick W. ; Carter, Ronald L. ; Owens, John M. ; Shieh, Tsay Jiu. / GaAs MESFET Simulation Using PISCES with Field-Dependent Mobility-Diffusivity Relation. In: IEEE Transactions on Electron Devices. 1987 ; Vol. 34, No. 10. pp. 2034-2039.
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