GaAs MESFET Simulation Using PISCES with Field-Dependent Mobility-Diffusivity Relation

Roderick W. McColl, Ronald L. Carter, John M. Owens, Tsay Jiu Shieh

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Most conventional semiconductor device simulators, such as PISCES and BAMBI, use a constant diffusivity-to-mobility ratio modeling (linear relation). We modify PISCES to perform field-dependent diffusivity-to-mobility ratio (nonlinear relation) GaAs MESFET simulation and compare it to the constant ratio linear modeling. The results show that current overshoot and stable Gunn-domain formation occurred at a lower channel-impurity concentration for the field-dependent diffusivity-to-mobility ratio case. The transconductance and threshold voltage of a 1-jtm gate-length MESFET are compared also.

Original languageEnglish (US)
Pages (from-to)2034-2039
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume34
Issue number10
DOIs
StatePublished - Oct 1987

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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