Hydrogen interactions with intrinsic defects in silicon

J. L. Hastings; M. Gharaibeh; Stefan K. Estreicher; P. A. Fedders

doi:10.1016/S0921-4526(99)00456-1

Hydrogen interactions with intrinsic defects in silicon

J. L. Hastings, M. Gharaibeh, Stefan K. Estreicher, P. A. Fedders

Research output: Contribution to journal › Article

6 Scopus citations

Abstract

The interactions between hydrogen and intrinsic defects in silicon are studied using ab initio molecular dynamics simulations in periodic supercells and Hartree-Fock in saturated clusters. The two issues discussed here are the complexes involving one neutral self-interstitial with one to four H's and the trapping of a single H at various vacancy aggregates. The binding energies, structures, and properties of these defects are calculated.

Original language	English (US)
Pages (from-to)	216-219
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00456-1
Publication status	Published - Dec 15 1999

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ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

Cite this

Hastings, J. L., Gharaibeh, M., Estreicher, S. K., & Fedders, P. A. (1999). Hydrogen interactions with intrinsic defects in silicon. Physica B: Condensed Matter, 273-274, 216-219. https://doi.org/10.1016/S0921-4526(99)00456-1

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10.1016/S0921-4526(99)00456-1