Hydrogen interactions with intrinsic defects in silicon

J. L. Hastings; M. Gharaibeh; Stefan K. Estreicher; P. A. Fedders

doi:10.1016/S0921-4526(99)00456-1

Hydrogen interactions with intrinsic defects in silicon

J. L. Hastings, M. Gharaibeh, Stefan K. Estreicher, P. A. Fedders

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

The interactions between hydrogen and intrinsic defects in silicon are studied using ab initio molecular dynamics simulations in periodic supercells and Hartree-Fock in saturated clusters. The two issues discussed here are the complexes involving one neutral self-interstitial with one to four H's and the trapping of a single H at various vacancy aggregates. The binding energies, structures, and properties of these defects are calculated.

Original language	English (US)
Pages (from-to)	216-219
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00456-1
State	Published - Dec 15 1999
Event	Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: Jul 26 1999 → Jul 30 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(99)00456-1

Cite this

@article{7b6e4b97568e45809ef6d0644e43d1c6,

title = "Hydrogen interactions with intrinsic defects in silicon",

abstract = "The interactions between hydrogen and intrinsic defects in silicon are studied using ab initio molecular dynamics simulations in periodic supercells and Hartree-Fock in saturated clusters. The two issues discussed here are the complexes involving one neutral self-interstitial with one to four H's and the trapping of a single H at various vacancy aggregates. The binding energies, structures, and properties of these defects are calculated.",

author = "Hastings, {J. L.} and M. Gharaibeh and Estreicher, {Stefan K.} and Fedders, {P. A.}",

note = "Funding Information: This work was supported in part by the grant D-1126 from the R.A. Welch Foundation and by the contract XAD-7-17652-01 from the National Renewable Energy Laboratory.; Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) ; Conference date: 26-07-1999 Through 30-07-1999",

year = "1999",

month = dec,

day = "15",

doi = "10.1016/S0921-4526(99)00456-1",

language = "English (US)",

volume = "273-274",

pages = "216--219",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - Hydrogen interactions with intrinsic defects in silicon

AU - Hastings, J. L.

AU - Gharaibeh, M.

AU - Estreicher, Stefan K.

AU - Fedders, P. A.

N1 - Funding Information: This work was supported in part by the grant D-1126 from the R.A. Welch Foundation and by the contract XAD-7-17652-01 from the National Renewable Energy Laboratory.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - The interactions between hydrogen and intrinsic defects in silicon are studied using ab initio molecular dynamics simulations in periodic supercells and Hartree-Fock in saturated clusters. The two issues discussed here are the complexes involving one neutral self-interstitial with one to four H's and the trapping of a single H at various vacancy aggregates. The binding energies, structures, and properties of these defects are calculated.

AB - The interactions between hydrogen and intrinsic defects in silicon are studied using ab initio molecular dynamics simulations in periodic supercells and Hartree-Fock in saturated clusters. The two issues discussed here are the complexes involving one neutral self-interstitial with one to four H's and the trapping of a single H at various vacancy aggregates. The binding energies, structures, and properties of these defects are calculated.

UR - http://www.scopus.com/inward/record.url?scp=0033342286&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033342286&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00456-1

DO - 10.1016/S0921-4526(99)00456-1

M3 - Conference article

AN - SCOPUS:0033342286

VL - 273-274

SP - 216

EP - 219

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)

Y2 - 26 July 1999 through 30 July 1999

ER -

Hydrogen interactions with intrinsic defects in silicon

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this