Abstract
The interactions between hydrogen and intrinsic defects in silicon are studied using ab initio molecular dynamics simulations in periodic supercells and Hartree-Fock in saturated clusters. The two issues discussed here are the complexes involving one neutral self-interstitial with one to four H's and the trapping of a single H at various vacancy aggregates. The binding energies, structures, and properties of these defects are calculated.
Original language | English (US) |
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Pages (from-to) | 216-219 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 273-274 |
DOIs | |
State | Published - Dec 15 1999 |
Event | Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: Jul 26 1999 → Jul 30 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering