Abstract
Nanoimprint with a large-scale nanoporous Si mold is developed to fabricate high density periodic nanopillars (∼ 1010 cm2) in various functional polymers. A anodic alumina membrane is first obtained using electrochemical anodization. The membrane is used as a mask for a two-step plasma etching process to obtain a Si mold of 50-80 nm wide and 100-900 nm deep pores. The mold is used in nanoimprint lithography to fabricate ordered and high density polymer nanopillars and nanopores in SU-8, hydrogen silsesquixane, polymethylmethacrylate, poly(3-hexylthiophane) (P3HT), and phenyl-C61-butyric acid methyl ester (PCBM). Then, the imprinted P3HT nanopillars were used to make bulk heterojunction solar cells by depositing PCBM on top of the pillars. Imprinting provides a way to precisely control the interdigitized heterojunction morphology, leading to improved solar cell performance.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2562-2566 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 26 |
| Issue number | 6 |
| DOIs | |
| State | Published - 2008 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Imprinted large-scale high density polymer nanopillars for organic solar cells. / Aryal, Mukti; Buyukserin, Fatih; Mielczarek, Kamil; Zhao, Xiao Mei; Gao, Jinming; Zakhidov, Anvar; Hu, Wenchuang.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 6, 2008, p. 2562-2566.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Imprinted large-scale high density polymer nanopillars for organic solar cells
AU - Aryal, Mukti
AU - Buyukserin, Fatih
AU - Mielczarek, Kamil
AU - Zhao, Xiao Mei
AU - Gao, Jinming
AU - Zakhidov, Anvar
AU - Hu, Wenchuang
PY - 2008
Y1 - 2008
N2 - Nanoimprint with a large-scale nanoporous Si mold is developed to fabricate high density periodic nanopillars (∼ 1010 cm2) in various functional polymers. A anodic alumina membrane is first obtained using electrochemical anodization. The membrane is used as a mask for a two-step plasma etching process to obtain a Si mold of 50-80 nm wide and 100-900 nm deep pores. The mold is used in nanoimprint lithography to fabricate ordered and high density polymer nanopillars and nanopores in SU-8, hydrogen silsesquixane, polymethylmethacrylate, poly(3-hexylthiophane) (P3HT), and phenyl-C61-butyric acid methyl ester (PCBM). Then, the imprinted P3HT nanopillars were used to make bulk heterojunction solar cells by depositing PCBM on top of the pillars. Imprinting provides a way to precisely control the interdigitized heterojunction morphology, leading to improved solar cell performance.
AB - Nanoimprint with a large-scale nanoporous Si mold is developed to fabricate high density periodic nanopillars (∼ 1010 cm2) in various functional polymers. A anodic alumina membrane is first obtained using electrochemical anodization. The membrane is used as a mask for a two-step plasma etching process to obtain a Si mold of 50-80 nm wide and 100-900 nm deep pores. The mold is used in nanoimprint lithography to fabricate ordered and high density polymer nanopillars and nanopores in SU-8, hydrogen silsesquixane, polymethylmethacrylate, poly(3-hexylthiophane) (P3HT), and phenyl-C61-butyric acid methyl ester (PCBM). Then, the imprinted P3HT nanopillars were used to make bulk heterojunction solar cells by depositing PCBM on top of the pillars. Imprinting provides a way to precisely control the interdigitized heterojunction morphology, leading to improved solar cell performance.
UR - http://www.scopus.com/inward/record.url?scp=57249094025&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=57249094025&partnerID=8YFLogxK
U2 - 10.1116/1.2981076
DO - 10.1116/1.2981076
M3 - Article
AN - SCOPUS:57249094025
VL - 26
SP - 2562
EP - 2566
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 6
ER -