(Keynote) devices in CMOS for terahertz circuits and systems

K. K. O, Z. Ahmad, W. Choi, N. Sharm, J. Zhang, Q. Zhong, D. Y. Kim, Z. Y. Chen, Y. Zhang, R. Han, D. Shim, S. Sankaran, E. Y. Seok, Sandeep Kshattry, C. Cao, C. Mao, R. M. Schueler, I. R. Medvedev, D. J. Lary, H. J. NamP. Raskin, F. C. Delucia, J. P. McMillan, C. F. Neese, I. Kim, I. Momson, P. Yellswarapu, S. Dong, P. Byreddy, Z. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

CMOS (Complementary Metal Oxide Semiconductor) integrated circuits (IC's) technology has emerged as a means for realization of capable and affordable systems that operate at 300 GHz and higher. Signal generation up to 1.3 THz, coherent detection up to 410 GHz and incoherent detection up to ∼10 THz have been demonstrated using CMOS integrated circuits. Furthermore, a highly integrated rotational spectroscopy transceiver operating up to near 300 GHz and imaging arrays operating near 1 THz have been demonstrated in CMOS. Signal generation as well as coherent detection up to 5 THz as well as incoherent detection beyond 40 THz with sufficient performance for practical applications should be possible in CMOS especially with minor process modifications to optimize the performance of MOS varactors and Schottky barrier diodes.

Original languageEnglish (US)
Title of host publicationECS Transactions
EditorsK. Shiojima, A. Mai, J. Murota, P. Chin, C. L. Claeys, H. Iwai, S. Deleonibus, M. Tao
PublisherElectrochemical Society Inc.
Pages3-15
Number of pages13
Edition4
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2017
Event10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting - National Harbor, United States
Duration: Oct 1 2017Oct 5 2017

Publication series

NameECS Transactions
Number4
Volume80
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period10/1/1710/5/17

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    O, K. K., Ahmad, Z., Choi, W., Sharm, N., Zhang, J., Zhong, Q., Kim, D. Y., Chen, Z. Y., Zhang, Y., Han, R., Shim, D., Sankaran, S., Seok, E. Y., Kshattry, S., Cao, C., Mao, C., Schueler, R. M., Medvedev, I. R., Lary, D. J., ... Chen, Z. (2017). (Keynote) devices in CMOS for terahertz circuits and systems. In K. Shiojima, A. Mai, J. Murota, P. Chin, C. L. Claeys, H. Iwai, S. Deleonibus, & M. Tao (Eds.), ECS Transactions (4 ed., pp. 3-15). (ECS Transactions; Vol. 80, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/08004.0003ecst