Measurements of quantized conductance in gallium as a function of temperature

B. B. Lewis, K. G. Vandervoort, R. D. Foster

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Abstract

Using a scanning tunneling microscope in a large number of approach and retraction experiments, quantized conductance is observed for the first time in gallium. We compare the conductance quantization at temperatures between 300 and 4.2 K, just slightly below and far below the bulk melting point of gallium. We find that the conductance is significantly dependent on temperature and find a moderate conductance peak at 1Go (2e2/h) that increases in intensity with decreasing temperature. At 4.2 K, a second conductance peak at 2Go is observed. We attribute our observations to gallium's unique orthorhombic crystal structure and a significant increase in atomic disorder at temperatures near the melting point.

Original languageEnglish (US)
Pages (from-to)525-530
Number of pages6
JournalSolid State Communications
Volume109
Issue number8
Publication statusPublished - Feb 17 1999

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Keywords

  • A. Metals
  • C. Scanning tunneling microscopy
  • D. Electronic transport

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Lewis, B. B., Vandervoort, K. G., & Foster, R. D. (1999). Measurements of quantized conductance in gallium as a function of temperature. Solid State Communications, 109(8), 525-530.