Summary form only given. Ion sensing field effect transistor (ISFET) instability is due in part to defects in the gate insulator and thrombus formation. The authors have encased the sensing surface in a patterned pH glass film and also incorporated a blood-compatible alkylated microporous polymer film to improve sensor stability. Preliminary results with these devices are described.
|Original language||English (US)|
|Title of host publication||IEEE/Engineering in Medicine and Biology Society Annual Conference|
|Place of Publication||New York, NY, USA|
|Number of pages||1|
|State||Published - 1986|
ASJC Scopus subject areas