PH GLASS-INTERFACE ION SENSING FIELD EFFECT TRANSISTOR.

R. C. Eberhart, L. Rehn, J. McIntyre, C. G. Eberhart

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Summary form only given. Ion sensing field effect transistor (ISFET) instability is due in part to defects in the gate insulator and thrombus formation. The authors have encased the sensing surface in a patterned pH glass film and also incorporated a blood-compatible alkylated microporous polymer film to improve sensor stability. Preliminary results with these devices are described.

Original languageEnglish (US)
Title of host publicationIEEE/Engineering in Medicine and Biology Society Annual Conference
Place of PublicationNew York, NY, USA
PublisherIEEE
Pages1667
Number of pages1
StatePublished - 1986

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'PH GLASS-INTERFACE ION SENSING FIELD EFFECT TRANSISTOR.'. Together they form a unique fingerprint.

  • Cite this

    Eberhart, R. C., Rehn, L., McIntyre, J., & Eberhart, C. G. (1986). PH GLASS-INTERFACE ION SENSING FIELD EFFECT TRANSISTOR. In IEEE/Engineering in Medicine and Biology Society Annual Conference (pp. 1667). IEEE.