Temperature dependence of 1/f noise mechanisms in silicon nanowire biochemical field effect transistors

Nitin K. Rajan, David A. Routenberg, Jin Chen, Mark A. Reed

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

The 1/f noise of silicon nanowire biochemical field effect transistors is fully characterized from weak to strong inversion in the temperature range 100-300 K. At 300 K, our devices follow the correlated Δn-Δμ model. As the temperature is lowered, the correlated mobility fluctuations become insignificant and the low frequency noise is best modeled by the Δn -model. For some devices, evidence of random telegraph signals is observed at low temperatures, indicating that fewer traps are active and that the 1/f noise due to number fluctuations is further resolved to fewer fluctuators, resulting in a Lorentzian spectrum.

Original languageEnglish (US)
Article number243501
JournalApplied Physics Letters
Volume97
Issue number24
DOIs
StatePublished - Dec 13 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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