Abstract
The 1/f noise of silicon nanowire biochemical field effect transistors is fully characterized from weak to strong inversion in the temperature range 100-300 K. At 300 K, our devices follow the correlated Δn-Δμ model. As the temperature is lowered, the correlated mobility fluctuations become insignificant and the low frequency noise is best modeled by the Δn -model. For some devices, evidence of random telegraph signals is observed at low temperatures, indicating that fewer traps are active and that the 1/f noise due to number fluctuations is further resolved to fewer fluctuators, resulting in a Lorentzian spectrum.
Original language | English (US) |
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Article number | 243501 |
Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 24 |
DOIs | |
State | Published - Dec 13 2010 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)