The ring-hexavacany in silicon: A stable and inactive defect

S. K. Estreicher, J. L. Hastings, P. A. Fedders

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

Molecular dynamics simulations as well as ab initio and near ab initio Hartree-Fock calculations in crystalline silicon predict that the configuration of the hexavacancy that has a hexagonal ring missing from the crystal is remarkably stable. The energetics imply that it does form and is more likely to grow than to dissociate during heat treatments. Further, the energy eigenvalues and the charge distribution imply that it has no electrical or optical activity. However, it is a large void in the crystal and could be an efficient gettering center and a precursor of extended defects.

Original languageEnglish (US)
Pages (from-to)432-434
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number4
StatePublished - Jan 27 1997

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optical activity
rings
defects
silicon
charge distribution
crystals
voids
heat treatment
eigenvalues
molecular dynamics
configurations
simulation
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

The ring-hexavacany in silicon : A stable and inactive defect. / Estreicher, S. K.; Hastings, J. L.; Fedders, P. A.

In: Applied Physics Letters, Vol. 70, No. 4, 27.01.1997, p. 432-434.

Research output: Contribution to journalArticle

Estreicher, SK, Hastings, JL & Fedders, PA 1997, 'The ring-hexavacany in silicon: A stable and inactive defect', Applied Physics Letters, vol. 70, no. 4, pp. 432-434.
Estreicher, S. K. ; Hastings, J. L. ; Fedders, P. A. / The ring-hexavacany in silicon : A stable and inactive defect. In: Applied Physics Letters. 1997 ; Vol. 70, No. 4. pp. 432-434.
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