Ultrasensitive protein detection using lithographically defined Si multi-nanowire field effect transistors

Ruhai Tian, Suresh Regonda, Jinming Gao, Yaling Liu, Walter Hu

Research output: Contribution to journalArticle

53 Scopus citations

Abstract

Low-doped silicon multi-nanowire field effect transistors with high ON/OFF ratio over 107 and a low subthreshold swing of 60-120 mV dec -1 are fabricated using lithographic semiconductor processes. The use of multi-nanowires instead of a single nanowire as sensing elements has shown improved device uniformity and stability in buffer solutions. The device stability is further improved with surface silanization and biasing with a solution gate rather than a backgate. pH sensing with a linear response over a range of 2-9 is achieved using these devices. Selective detection of bovine serum albumin at concentrations as low as 0.1 femtomolar is demonstrated.

Original languageEnglish (US)
Pages (from-to)1952-1961
Number of pages10
JournalLab on a Chip - Miniaturisation for Chemistry and Biology
Volume11
Issue number11
DOIs
Publication statusPublished - Jun 7 2011

    Fingerprint

ASJC Scopus subject areas

  • Biochemistry
  • Chemistry(all)
  • Bioengineering
  • Biomedical Engineering

Cite this