High performance ZnO nanowire FET with ITO contacts

Matthew A. Hollister, John D. Le, Guanghua Xiao, Xuekun Lu, Richard A. Kiehl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Nanowire FETs based on a ZnO channel, a SiO2 gate-dielectric and ITO source-drain contacts are reported. The 55 mS/mm transconductance and other performance parameters are the best reported for any ZnO-based FET. The results demonstrate that high-performance ZnO NW FETs can be fabricated by conventional processes without special gate dielectrics or surface layers.

Original languageEnglish (US)
Title of host publication65th DRC Device Research Conference
Pages113-114
Number of pages2
DOIs
StatePublished - 2007
Event65th DRC Device Research Conference - South Bend, India
Duration: Jun 18 2007Jun 20 2007

Other

Other65th DRC Device Research Conference
CountryIndia
CitySouth Bend
Period6/18/076/20/07

Fingerprint

Field effect transistors
Nanowires
Gate dielectrics
Transconductance

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Hollister, M. A., Le, J. D., Xiao, G., Lu, X., & Kiehl, R. A. (2007). High performance ZnO nanowire FET with ITO contacts. In 65th DRC Device Research Conference (pp. 113-114). [4373675] https://doi.org/10.1109/DRC.2007.4373675

High performance ZnO nanowire FET with ITO contacts. / Hollister, Matthew A.; Le, John D.; Xiao, Guanghua; Lu, Xuekun; Kiehl, Richard A.

65th DRC Device Research Conference. 2007. p. 113-114 4373675.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hollister, MA, Le, JD, Xiao, G, Lu, X & Kiehl, RA 2007, High performance ZnO nanowire FET with ITO contacts. in 65th DRC Device Research Conference., 4373675, pp. 113-114, 65th DRC Device Research Conference, South Bend, India, 6/18/07. https://doi.org/10.1109/DRC.2007.4373675
Hollister MA, Le JD, Xiao G, Lu X, Kiehl RA. High performance ZnO nanowire FET with ITO contacts. In 65th DRC Device Research Conference. 2007. p. 113-114. 4373675 https://doi.org/10.1109/DRC.2007.4373675
Hollister, Matthew A. ; Le, John D. ; Xiao, Guanghua ; Lu, Xuekun ; Kiehl, Richard A. / High performance ZnO nanowire FET with ITO contacts. 65th DRC Device Research Conference. 2007. pp. 113-114
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