High performance ZnO nanowire FET with ITO contacts

Matthew A. Hollister, John D. Le, Guanghua Xiao, Xuekun Lu, Richard A. Kiehl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Nanowire FETs based on a ZnO channel, a SiO2 gate-dielectric and ITO source-drain contacts are reported. The 55 mS/mm transconductance and other performance parameters are the best reported for any ZnO-based FET. The results demonstrate that high-performance ZnO NW FETs can be fabricated by conventional processes without special gate dielectrics or surface layers.

Original languageEnglish (US)
Title of host publication65th DRC Device Research Conference
Pages113-114
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event65th DRC Device Research Conference - South Bend, India
Duration: Jun 18 2007Jun 20 2007

Publication series

Name65th DRC Device Research Conference

Other

Other65th DRC Device Research Conference
CountryIndia
CitySouth Bend
Period6/18/076/20/07

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Hollister, M. A., Le, J. D., Xiao, G., Lu, X., & Kiehl, R. A. (2007). High performance ZnO nanowire FET with ITO contacts. In 65th DRC Device Research Conference (pp. 113-114). [4373675] (65th DRC Device Research Conference). https://doi.org/10.1109/DRC.2007.4373675