Infrared characterization of interfacial Si-O bond formation on silanized flat SiO2/Si Surfaces

Ruhai Tian, Oliver Seitz, Meng Li, Wenchuang Hu, Yves J. Chabal, Jinming Gao

Research output: Contribution to journalArticle

91 Citations (Scopus)

Abstract

Chemical functionalization of silicon oxide (SiO2) surfaces with silane molecules is an important technique for a variety of device and sensor applications. Quality control of self-assembled monolayers (SAMs) is difficult to achieve because of the lack of a direct measure for newly formed interfacial Si-O bonds. Herein we report a sensitive measure of the bonding interface between the SAM and SiO2, whereby the longitudinal optical (LO) phonon mode of SiO2 provides a high level of selectivity for the characterization of newly formed interfacial bonds. The intensity and spectral position of the LO peak, observed upon silanization of a variety of silane molecules, are shown to be reliable fingerprints of formation of interfacial bonds that effectively extend the Si-O network after SAM formation. While the IR absorption intensities of functional groups (e.g., > C=O, CH 2/CH3) depend on the nature of the films, the blue-shift and intensity increase of the LO phonon mode are common to all silane molecules investigated and their magnitude is associated with the creation of interfacial bonds only. Moreover, results from this study demonstrate the ability of the LO phonon mode to analyze the silanization kinetics of SiO2 surfaces, which provides mechanistic insights on the self-assembly process to help achieve a stable and high quality SAM.

Original languageEnglish (US)
Pages (from-to)4563-4566
Number of pages4
JournalLangmuir
Volume26
Issue number7
DOIs
StatePublished - Apr 6 2010

Fingerprint

Self assembled monolayers
Silanes
silanes
Infrared radiation
Molecules
molecules
quality control
silicon oxides
blue shift
self assembly
Silicon oxides
selectivity
methylidyne
Self assembly
Functional groups
Quality control
sensors
kinetics
Kinetics
Sensors

ASJC Scopus subject areas

  • Electrochemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Materials Science(all)
  • Spectroscopy

Cite this

Infrared characterization of interfacial Si-O bond formation on silanized flat SiO2/Si Surfaces. / Tian, Ruhai; Seitz, Oliver; Li, Meng; Hu, Wenchuang; Chabal, Yves J.; Gao, Jinming.

In: Langmuir, Vol. 26, No. 7, 06.04.2010, p. 4563-4566.

Research output: Contribution to journalArticle

Tian, Ruhai ; Seitz, Oliver ; Li, Meng ; Hu, Wenchuang ; Chabal, Yves J. ; Gao, Jinming. / Infrared characterization of interfacial Si-O bond formation on silanized flat SiO2/Si Surfaces. In: Langmuir. 2010 ; Vol. 26, No. 7. pp. 4563-4566.
@article{e29ac456c2ab41c197d374daeba16420,
title = "Infrared characterization of interfacial Si-O bond formation on silanized flat SiO2/Si Surfaces",
abstract = "Chemical functionalization of silicon oxide (SiO2) surfaces with silane molecules is an important technique for a variety of device and sensor applications. Quality control of self-assembled monolayers (SAMs) is difficult to achieve because of the lack of a direct measure for newly formed interfacial Si-O bonds. Herein we report a sensitive measure of the bonding interface between the SAM and SiO2, whereby the longitudinal optical (LO) phonon mode of SiO2 provides a high level of selectivity for the characterization of newly formed interfacial bonds. The intensity and spectral position of the LO peak, observed upon silanization of a variety of silane molecules, are shown to be reliable fingerprints of formation of interfacial bonds that effectively extend the Si-O network after SAM formation. While the IR absorption intensities of functional groups (e.g., > C=O, CH 2/CH3) depend on the nature of the films, the blue-shift and intensity increase of the LO phonon mode are common to all silane molecules investigated and their magnitude is associated with the creation of interfacial bonds only. Moreover, results from this study demonstrate the ability of the LO phonon mode to analyze the silanization kinetics of SiO2 surfaces, which provides mechanistic insights on the self-assembly process to help achieve a stable and high quality SAM.",
author = "Ruhai Tian and Oliver Seitz and Meng Li and Wenchuang Hu and Chabal, {Yves J.} and Jinming Gao",
year = "2010",
month = "4",
day = "6",
doi = "10.1021/la904597c",
language = "English (US)",
volume = "26",
pages = "4563--4566",
journal = "Langmuir",
issn = "0743-7463",
publisher = "American Chemical Society",
number = "7",

}

TY - JOUR

T1 - Infrared characterization of interfacial Si-O bond formation on silanized flat SiO2/Si Surfaces

AU - Tian, Ruhai

AU - Seitz, Oliver

AU - Li, Meng

AU - Hu, Wenchuang

AU - Chabal, Yves J.

AU - Gao, Jinming

PY - 2010/4/6

Y1 - 2010/4/6

N2 - Chemical functionalization of silicon oxide (SiO2) surfaces with silane molecules is an important technique for a variety of device and sensor applications. Quality control of self-assembled monolayers (SAMs) is difficult to achieve because of the lack of a direct measure for newly formed interfacial Si-O bonds. Herein we report a sensitive measure of the bonding interface between the SAM and SiO2, whereby the longitudinal optical (LO) phonon mode of SiO2 provides a high level of selectivity for the characterization of newly formed interfacial bonds. The intensity and spectral position of the LO peak, observed upon silanization of a variety of silane molecules, are shown to be reliable fingerprints of formation of interfacial bonds that effectively extend the Si-O network after SAM formation. While the IR absorption intensities of functional groups (e.g., > C=O, CH 2/CH3) depend on the nature of the films, the blue-shift and intensity increase of the LO phonon mode are common to all silane molecules investigated and their magnitude is associated with the creation of interfacial bonds only. Moreover, results from this study demonstrate the ability of the LO phonon mode to analyze the silanization kinetics of SiO2 surfaces, which provides mechanistic insights on the self-assembly process to help achieve a stable and high quality SAM.

AB - Chemical functionalization of silicon oxide (SiO2) surfaces with silane molecules is an important technique for a variety of device and sensor applications. Quality control of self-assembled monolayers (SAMs) is difficult to achieve because of the lack of a direct measure for newly formed interfacial Si-O bonds. Herein we report a sensitive measure of the bonding interface between the SAM and SiO2, whereby the longitudinal optical (LO) phonon mode of SiO2 provides a high level of selectivity for the characterization of newly formed interfacial bonds. The intensity and spectral position of the LO peak, observed upon silanization of a variety of silane molecules, are shown to be reliable fingerprints of formation of interfacial bonds that effectively extend the Si-O network after SAM formation. While the IR absorption intensities of functional groups (e.g., > C=O, CH 2/CH3) depend on the nature of the films, the blue-shift and intensity increase of the LO phonon mode are common to all silane molecules investigated and their magnitude is associated with the creation of interfacial bonds only. Moreover, results from this study demonstrate the ability of the LO phonon mode to analyze the silanization kinetics of SiO2 surfaces, which provides mechanistic insights on the self-assembly process to help achieve a stable and high quality SAM.

UR - http://www.scopus.com/inward/record.url?scp=77950549024&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950549024&partnerID=8YFLogxK

U2 - 10.1021/la904597c

DO - 10.1021/la904597c

M3 - Article

C2 - 20180563

AN - SCOPUS:77950549024

VL - 26

SP - 4563

EP - 4566

JO - Langmuir

JF - Langmuir

SN - 0743-7463

IS - 7

ER -