Lithographically defined si nanowire field effect transistors for biochemical sensing

Walter Hu; Fern Yoon; Suresh Regonda; Poornika Fernandes; Eric M. Vogel; Fatih Buyukserin; Xiao Mei Zhao; Jinming Gao

doi:10.1109/NANO.2008.152

Lithographically defined si nanowire field effect transistors for biochemical sensing

Walter Hu, Fern Yoon, Suresh Regonda, Poornika Fernandes, Eric M. Vogel, Fatih Buyukserin, Xiao Mei Zhao, Jinming Gao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

A process integration of e-beam lithography, plasma etching, and Si processing have been developed to pattern Si nanowires on crystalline Si on insulator wafers. Si nanowires of 12-50 nm linewidth, 30-70 nm height, and 10 μm length have been made. Using these Si nanowires as conducting channels, field effect transistors using the back Si substrate as gate have been fabricated. Good I-V characteristics have been obtained. With the back-gate configuration, the surface of Si nanowires can be functionalized for biochemical sensing applications.

Original language	English (US)
Title of host publication	2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Pages	507-508
Number of pages	2
DOIs	https://doi.org/10.1109/NANO.2008.152
State	Published - Nov 10 2008
Event	2008 8th IEEE Conference on Nanotechnology, IEEE-NANO - Arlington, TX, United States Duration: Aug 18 2008 → Aug 21 2008

Publication series

Name	2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Other

Other	2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Country/Territory	United States
City	Arlington, TX
Period	8/18/08 → 8/21/08

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/NANO.2008.152

Cite this

Hu, W., Yoon, F., Regonda, S., Fernandes, P., Vogel, E. M., Buyukserin, F., Zhao, X. M., & Gao, J. (2008). Lithographically defined si nanowire field effect transistors for biochemical sensing. In 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO (pp. 507-508). Article 4617134 (2008 8th IEEE Conference on Nanotechnology, IEEE-NANO). https://doi.org/10.1109/NANO.2008.152

Hu, W, Yoon, F, Regonda, S, Fernandes, P, Vogel, EM, Buyukserin, F, Zhao, XM & Gao, J 2008, Lithographically defined si nanowire field effect transistors for biochemical sensing. in 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO., 4617134, 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, pp. 507-508, 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, Arlington, TX, United States, 8/18/08. https://doi.org/10.1109/NANO.2008.152

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abstract = "A process integration of e-beam lithography, plasma etching, and Si processing have been developed to pattern Si nanowires on crystalline Si on insulator wafers. Si nanowires of 12-50 nm linewidth, 30-70 nm height, and 10 μm length have been made. Using these Si nanowires as conducting channels, field effect transistors using the back Si substrate as gate have been fabricated. Good I-V characteristics have been obtained. With the back-gate configuration, the surface of Si nanowires can be functionalized for biochemical sensing applications.",

author = "Walter Hu and Fern Yoon and Suresh Regonda and Poornika Fernandes and Vogel, {Eric M.} and Fatih Buyukserin and Zhao, {Xiao Mei} and Jinming Gao",

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doi = "10.1109/NANO.2008.152",

language = "English (US)",

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AU - Hu, Walter

AU - Yoon, Fern

AU - Regonda, Suresh

AU - Fernandes, Poornika

AU - Vogel, Eric M.

AU - Buyukserin, Fatih

AU - Zhao, Xiao Mei

AU - Gao, Jinming

PY - 2008/11/10

Y1 - 2008/11/10

N2 - A process integration of e-beam lithography, plasma etching, and Si processing have been developed to pattern Si nanowires on crystalline Si on insulator wafers. Si nanowires of 12-50 nm linewidth, 30-70 nm height, and 10 μm length have been made. Using these Si nanowires as conducting channels, field effect transistors using the back Si substrate as gate have been fabricated. Good I-V characteristics have been obtained. With the back-gate configuration, the surface of Si nanowires can be functionalized for biochemical sensing applications.

AB - A process integration of e-beam lithography, plasma etching, and Si processing have been developed to pattern Si nanowires on crystalline Si on insulator wafers. Si nanowires of 12-50 nm linewidth, 30-70 nm height, and 10 μm length have been made. Using these Si nanowires as conducting channels, field effect transistors using the back Si substrate as gate have been fabricated. Good I-V characteristics have been obtained. With the back-gate configuration, the surface of Si nanowires can be functionalized for biochemical sensing applications.

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T3 - 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

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EP - 508

BT - 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

T2 - 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Y2 - 18 August 2008 through 21 August 2008

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Lithographically defined si nanowire field effect transistors for biochemical sensing

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