Lithographically defined si nanowire field effect transistors for biochemical sensing

Walter Hu, Fern Yoon, Suresh Regonda, Poornika Fernandes, Eric M. Vogel, Fatih Buyukserin, Xiao Mei Zhao, Jinming Gao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

A process integration of e-beam lithography, plasma etching, and Si processing have been developed to pattern Si nanowires on crystalline Si on insulator wafers. Si nanowires of 12-50 nm linewidth, 30-70 nm height, and 10 μm length have been made. Using these Si nanowires as conducting channels, field effect transistors using the back Si substrate as gate have been fabricated. Good I-V characteristics have been obtained. With the back-gate configuration, the surface of Si nanowires can be functionalized for biochemical sensing applications.

Original languageEnglish (US)
Title of host publication2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Pages507-508
Number of pages2
DOIs
StatePublished - Nov 10 2008
Event2008 8th IEEE Conference on Nanotechnology, IEEE-NANO - Arlington, TX, United States
Duration: Aug 18 2008Aug 21 2008

Publication series

Name2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Other

Other2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
CountryUnited States
CityArlington, TX
Period8/18/088/21/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Hu, W., Yoon, F., Regonda, S., Fernandes, P., Vogel, E. M., Buyukserin, F., Zhao, X. M., & Gao, J. (2008). Lithographically defined si nanowire field effect transistors for biochemical sensing. In 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO (pp. 507-508). [4617134] (2008 8th IEEE Conference on Nanotechnology, IEEE-NANO). https://doi.org/10.1109/NANO.2008.152