Precision pulsed I-V system for accurate GaAs device I-V plane characterization

Sam Pritchett, Ryan Stewart, James Mason, Gailon Brehm, David Christie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

A precision on-wafer VXI-based pulsed I-V measurement system capable of rapid device characterization is presented. This system was developed for I-V plane characterization of GaAs FETs, HBTs, and diodes up to 100 volts. The pulsed I-V system is capable of pulsewidths under 200 nanoseconds with absolute current and voltage uncertainties less than 2.5 percent over greater than 110 dB of dynamic range. Measurement throughput is under 250 ms per I-V point. Accuracies are achieved by applying `dc voltage substitution' calibration to a novel pulser/sense instrument configuration.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
PublisherPubl by IEEE
Pages1353-1356
Number of pages4
ISBN (Print)0780317793
StatePublished - Jan 1 1994
EventProceedings of the IEEE MTT-S International Microwave Symposium - San Diego, CA, USA
Duration: May 23 1994May 27 1994

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume3
ISSN (Print)0149-645X

Other

OtherProceedings of the IEEE MTT-S International Microwave Symposium
CitySan Diego, CA, USA
Period5/23/945/27/94

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ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Pritchett, S., Stewart, R., Mason, J., Brehm, G., & Christie, D. (1994). Precision pulsed I-V system for accurate GaAs device I-V plane characterization. In IEEE MTT-S International Microwave Symposium Digest (pp. 1353-1356). (IEEE MTT-S International Microwave Symposium Digest; Vol. 3). Publ by IEEE.