Role of oxygen vacancies in V-doped ZnO diluted magnetic semiconductors

Hongbo Liu; Yang Liu; Lili Yang; Zhenguo Chen; Huilian Liu; Weijun Li; Jinghai Yang; Zhiping Zhou

doi:10.1007/s10854-015-2707-y

Role of oxygen vacancies in V-doped ZnO diluted magnetic semiconductors

Hongbo Liu, Yang Liu, Lili Yang, Zhenguo Chen, Huilian Liu, Weijun Li, Jinghai Yang, Zhiping Zhou

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

V-doped zinc oxide (Zn_1−xV_xO, 0 ≤ x ≤ 0.1) diluted magnetic semiconductors have been synthesized by using a sol–gel method. We systematically investigated effects of V-doping concentration on the structural, magnetic and optical properties of Zn_1−xV_xO nanoparticles. All diffraction peaks could be indexed to wurtzite structure of ZnO with V concentration of less than or equal to 3 at.%. Secondary phase of Zn₃V₃O₈ emerged when V concentration was higher than 3 at.%. Magnetic measurements indicated that the samples with V concentration less than or equal to 3 at.% were ferromagnetic at room temperature. Saturated magnetization of Zn_1−xV_xO nanoparticles increased with increase of V doping concentration. The results of Raman and photoluminescence testified that the ferromagnetism in Zn_1−xV_xO nanoparticles was probably originated from oxygen vacancies.

Original language	English (US)
Pages (from-to)	2466-2470
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	26
Issue number	4
DOIs	https://doi.org/10.1007/s10854-015-2707-y
State	Published - Apr 2015

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Role of oxygen vacancies in V-doped ZnO diluted magnetic semiconductors",

abstract = "V-doped zinc oxide (Zn1−xVxO, 0 ≤ x ≤ 0.1) diluted magnetic semiconductors have been synthesized by using a sol–gel method. We systematically investigated effects of V-doping concentration on the structural, magnetic and optical properties of Zn1−xVxO nanoparticles. All diffraction peaks could be indexed to wurtzite structure of ZnO with V concentration of less than or equal to 3 at.%. Secondary phase of Zn3V3O8 emerged when V concentration was higher than 3 at.%. Magnetic measurements indicated that the samples with V concentration less than or equal to 3 at.% were ferromagnetic at room temperature. Saturated magnetization of Zn1−xVxO nanoparticles increased with increase of V doping concentration. The results of Raman and photoluminescence testified that the ferromagnetism in Zn1−xVxO nanoparticles was probably originated from oxygen vacancies.",

author = "Hongbo Liu and Yang Liu and Lili Yang and Zhenguo Chen and Huilian Liu and Weijun Li and Jinghai Yang and Zhiping Zhou",

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T1 - Role of oxygen vacancies in V-doped ZnO diluted magnetic semiconductors

AU - Liu, Hongbo

AU - Liu, Yang

AU - Yang, Lili

AU - Chen, Zhenguo

AU - Liu, Huilian

AU - Li, Weijun

AU - Yang, Jinghai

AU - Zhou, Zhiping

PY - 2015/4

Y1 - 2015/4

N2 - V-doped zinc oxide (Zn1−xVxO, 0 ≤ x ≤ 0.1) diluted magnetic semiconductors have been synthesized by using a sol–gel method. We systematically investigated effects of V-doping concentration on the structural, magnetic and optical properties of Zn1−xVxO nanoparticles. All diffraction peaks could be indexed to wurtzite structure of ZnO with V concentration of less than or equal to 3 at.%. Secondary phase of Zn3V3O8 emerged when V concentration was higher than 3 at.%. Magnetic measurements indicated that the samples with V concentration less than or equal to 3 at.% were ferromagnetic at room temperature. Saturated magnetization of Zn1−xVxO nanoparticles increased with increase of V doping concentration. The results of Raman and photoluminescence testified that the ferromagnetism in Zn1−xVxO nanoparticles was probably originated from oxygen vacancies.

AB - V-doped zinc oxide (Zn1−xVxO, 0 ≤ x ≤ 0.1) diluted magnetic semiconductors have been synthesized by using a sol–gel method. We systematically investigated effects of V-doping concentration on the structural, magnetic and optical properties of Zn1−xVxO nanoparticles. All diffraction peaks could be indexed to wurtzite structure of ZnO with V concentration of less than or equal to 3 at.%. Secondary phase of Zn3V3O8 emerged when V concentration was higher than 3 at.%. Magnetic measurements indicated that the samples with V concentration less than or equal to 3 at.% were ferromagnetic at room temperature. Saturated magnetization of Zn1−xVxO nanoparticles increased with increase of V doping concentration. The results of Raman and photoluminescence testified that the ferromagnetism in Zn1−xVxO nanoparticles was probably originated from oxygen vacancies.

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JO - Journal of Materials Science: Materials in Electronics

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Role of oxygen vacancies in V-doped ZnO diluted magnetic semiconductors

Abstract

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