Role of oxygen vacancies in V-doped ZnO diluted magnetic semiconductors

Hongbo Liu, Yang Liu, Lili Yang, Zhenguo Chen, Huilian Liu, Weijun Li, Jinghai Yang, Zhiping Zhou

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

V-doped zinc oxide (Zn1−xVxO, 0 ≤ x ≤ 0.1) diluted magnetic semiconductors have been synthesized by using a sol–gel method. We systematically investigated effects of V-doping concentration on the structural, magnetic and optical properties of Zn1−xVxO nanoparticles. All diffraction peaks could be indexed to wurtzite structure of ZnO with V concentration of less than or equal to 3 at.%. Secondary phase of Zn3V3O8 emerged when V concentration was higher than 3 at.%. Magnetic measurements indicated that the samples with V concentration less than or equal to 3 at.% were ferromagnetic at room temperature. Saturated magnetization of Zn1−xVxO nanoparticles increased with increase of V doping concentration. The results of Raman and photoluminescence testified that the ferromagnetism in Zn1−xVxO nanoparticles was probably originated from oxygen vacancies.

Original languageEnglish (US)
Pages (from-to)2466-2470
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume26
Issue number4
DOIs
StatePublished - Jan 1 2015

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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