Controlling of Schottky barrier heights for Au/n-GaAs and Ti/n-GaAs with hydrogen introduced after metal deposition by bias annealing

S. X. Jin, H. P. Wang, M. H. Yuan, H. Z. Song, H. Wang, W. L. Mao, G. G. Qin, Ze Ying Ren, Bing Chen Li, Xiong Wei Hu, Guo Sheng Sun